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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION 2N3773 *With TO-3 package *Complement to type 2N6609 *High DC current gain *Low saturation voltage *High safe operating area APPLICATIONS *Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 160 140 7 16 30 4 15 150 0.855 150 -65~200 UNIT V V V A A A A W W/ SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Second breakdown collector current With base forward biased CONDITIONS IC=0.2A ;IB=0 IC=8A; IB=0.8A IC=16A ;IB=3.2A IC=8A ; VCE=4V VCE=140V; IB=0 VCE=140V; VBE(off)=1.5V TC=150 VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V VCE=100Vdc,t=1.0s, Nonrepetitive 15 5 1.5 MIN 140 TYP. SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 Is/b 2N3773 MAX UNIT V 1.4 4.0 2.2 2.0 2.0 10.0 5.0 60 V V V mA mA mA A THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3773 Fig.2 outline dimensions (unindicated tolerance:0.10mm) 3 |
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